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TN0620 - N-Channel Enhancement-Mode Vertical DMOS FETs

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Key Features

  • Low threshold (1.6V max. ).
  • High input impedance.
  • Low input capacitance (110pF typical).
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.
  • Complementary N- and P-channel devices.

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Datasheet Details

Part number TN0620
Manufacturer Supertex Inc
File Size 372.49 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TN0620 Datasheet

Full PDF Text Transcription (Reference)

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TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Low threshold (1.6V max.) ► High input impedance ► Low input capacitance (110pF typical) ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage ► Complementary N- and P-channel devices Applications ► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.